采用1.8V和3.0V电源供电
封装:WSON8 (6mm x 8mm)
高速时钟频率(30pF载荷时的快速读取为120MHz)
四通道数据吞吐量高达480Mbit/s
高可靠性,数据保留时间10年,编程/擦除周期达100000次
工作温度范围:-40℃~85℃
增强的访问性能,快速随机读取的缓存为2K或4K bytes
高级NAND功能,包括内部ECC
Part No. | Interface | Type | Voltage | Family |
GD5F1GM7RExxG | SPI | NAND | 1.8V | GD5F |
GD5F1GM7UExxG | SPI | NAND | 3.0V | GD5F |
GD5F1GQ4RExxG | SPI | NAND | 1.8V | GD5F |
GD5F1GQ4RExxH | SPI | NAND | 1.8V | GD5F |
GD5F1GQ4RFxxG | SPI | NAND | 1.8V | GD5F |
GD5F1GQ4RFxxH | SPI | NAND | 1.8V | GD5F |
GD5F1GQ4UExxG | SPI | NAND | 3.0V | GD5F |
GD5F1GQ4UExxH | SPI | NAND | 3.0V | GD5F |
GD5F1GQ4UFxxG | SPI | NAND | 3.0V | GD5F |
GD5F1GQ4UFxxH | SPI | NAND | 3.0V | GD5F |
GD5F1GQ5RExxG | SPI | NAND | 1.8V | GD5F |
GD5F1GQ5RExxH | SPI | NAND | 1.8V | GD5F |
GD5F1GQ5UExxG | SPI | NAND | 3.0V | GD5F |
GD5F1GQ5UExxH | SPI | NAND | 3.0V | GD5F |
GD5F2GM7RExxG | SPI | NAND | 1.8V | GD5F |
GD5F2GM7UExxG | SPI | NAND | 3.0V | GD5F |
GD5F2GQ4RExxG | SPI | NAND | 1.8V | GD5F |
GD5F2GQ4RExxH | SPI | NAND | 1.8V | GD5F |
GD5F2GQ4RFxxG | SPI | NAND | 1.8V | GD5F |
GD5F2GQ4RFxxH | SPI | NAND | 1.8V | GD5F |
GD5F2GQ4UExxG | SPI | NAND | 3.0V | GD5F |
GD5F2GQ4UExxH | SPI | NAND | 3.0V | GD5F |
GD5F2GQ4UFxxG | SPI | NAND | 3.0V | GD5F |
GD5F2GQ4UFxxH | SPI | NAND | 3.0V | GD5F |
GD5F2GQ5RExxG | SPI | NAND | 1.8V | GD5F |
GD5F2GQ5RExxH | SPI | NAND | 1.8V | GD5F |
GD5F2GQ5RFxxG | SPI | NAND | 1.8V | GD5F |
GD5F2GQ5RFxxH | SPI | NAND | 1.8V | GD5F |
GD5F2GQ5UExxG | SPI | NAND | 3.0V | GD5F |
GD5F2GQ5UExxH | SPI | NAND | 3.0V | GD5F |
GD5F2GQ5UFxxG | SPI | NAND | 3.0V | GD5F |
GD5F2GQ5UFxxH | SPI | NAND | 3.0V | GD5F |
GD5F4GM8RExxG | SPI | NAND | 1.8V | GD5F |
GD5F4GM8UExxG | SPI | NAND | 3.0V | GD5F |
GD5F4GQ6RExxG | SPI | NAND | 1.8V | GD5F |
GD5F4GQ6RExxH | SPI | NAND | 1.8V | GD5F |
GD5F4GQ6RFxxG | SPI | NAND | 1.8V | GD5F |
GD5F4GQ6RFxxH | SPI | NAND | 1.8V | GD5F |
GD5F4GQ6UExxG | SPI | NAND | 3.0V | GD5F |
GD5F4GQ6UExxH | SPI | NAND | 3.0V | GD5F |
GD5F4GQ6UFxxG | SPI | NAND | 3.0V | GD5F |
GD5F4GQ6UFxxH | SPI | NAND | 3.0V | GD5F |